TITANIUM
АСМ Раман
Модульные СЗМ
Автоматизированные СЗМ
Специализированные СЗМ
 

Терминология СЗМ

SAP
Scanning Atom Probe
Appl Phys A 66, №7, S11 (1998).
SATM
Scanning Acoustic Tunneling Microscopy
J. Vac. Sci. Techn. B 15, 1569 (1997).
SATS
Scanning Acoustic Tunneling Spectroscopy
J. Vac. Sci. Techn. B 15, 1569 (1997).
SCM
Scanning Capacitance Microscopy
SCVM
Scanning Capacitance-Voltage Microscope
US Pat. 5065103
SDM
Scanning Damping Microscopy
SEMM

Scanning Evanescent Electro-Magnetic Microscope
 A scanning microscope that uses near-field evanescent electromagnetic waves to probe sample properties. SEMM is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. SEMM can map dielectric constant, tangent loss, conductivity, complex electrical impedance, and other electrical parameters of materials.
US Pat. 6173604:

SEPM
Scanning Electrical Potential Microscopy
Scanning Electrical Properties Microscopy
SERRS

Ssurface-enhanced Resonance Raman Spectroscopy

SERS

Surface-enhanced Raman Spectroscopy

SFM

Scanning Force Microscopy
Shear Force Microscopy
Kind of SPM with a distance regulation method relied on the detection of shear forces between the end of a probe and the sample of interest.
Appl. Phys. Lett. 60, 2484 (1992).

SFS

Scanning Force Spectroscopy
Measurement of the frictional force as a function of the loading force

Static Force Spectroscopy
Recording the deflection of a cantilever as a function of the tip-sample distance, as the tip approaches and retracts from a sample surface. This method implies the assumption of a quasistatic displacement.

 

SGM

Scanning gate microscopy
The biased tip locally modified the conducting properties of the sample as it scans over it. SGM images this perturbation by measuring the conductance of the sample as a function of tip position. The conductance changes when the tip locally depletes, or gates the underlying electron system. SGM may also be used to determine whether the tip perturbs the sample during an EFM measurement.
Phys. Rev. Lett. 84, 6082 (2000).

SGS
Scanning gate spectroscopy
Appl. Phys.Lett. 76, 384 (2000).
ShFM

Shear Force Microscope, ShFM,

an AFM mode using signals arising from a  probe tip oscillating laterally in proximity to the surface.

SICM
Scanning Ion-Conductance Micriscope
Probe Microscopy 1, 187 (1998).
SIM

Scanning Impedance Microscopy
SIM is a scanning probe technique based on the detection of the phase change of cantilever oscillations induced by a lateral bias applied to the sample. This technique allows mapping of the local phase angle of complex microstructures and is complemented by scanning surface potential microscopy (SSPM). The combination of SIM and SSPM allows independent quantification of interface resistivity and capacitance, thus providing spatially resolved impedance spectra of complex microstructures.
Appl. Phys. Lett. 78, 1306 (2001).

SIMS
SIMS Secondary Ion Mass Spectrometry
SKP, SKPM
Scanning Kelvin Probe Microscopy
SLAM
Scanning Local-Acceleration Microscopy
Scanning Force Microscope operating at frequencies above the highest tip–sample resonance. SLAM greatly enhances the sensitivity of the microscope to materials’ properties.
J. Vac. Sci.Techn. B 14, 794 (1996).
slope detection
The most commonly used detection method, it involves driving the cantilever at a fixed frequency w slightly off resonance.
SMIF
Standard Mechanical Interface
SMM

Scanning Maxwell-Stress Microscopy
Appl. Phys. Lett. 78, 2560( 2001).
Scanning Microdeformation Microscopy
Scanning Microdeformation Microscopy is based on a vibrating contact tip. Scanning the sample reveals surface topography and mainly, subsurface elastic properties.
APL 62, 829, 1993
Scanning Microdeformation Microscopy is a form of contact a.c. force microscopy using a tip size of the order of a micron. The tip is mounted at the end of the cantilever and vibrates in contact with the sample. The system uses a resonance frequency and enables quantitative material characterization at any point of the sample surface.
Applied Physics A Materials Science & Processing. Abstract Volume 66, Issue 7, S227 (1998).

SMOKE
Surface Magneto-Optic Kerr Effect
SMRM
Scanning Magneto-Resistive Microscope
J. Appl. Phys. 85, 5018 (1999).
http://www.almaden.ibm.com/st/projects/limits/instrumentation/
SMS

Scanning mass spectrometry
Electronics Letters, 42, is. 14, p. 793-795 (2006)

SM SCM

Shear Mode SCM
Shear-mode SCM is developed using an all-metallic probe, whose distance from the sample is controlled by detecting the shear-force drag on the laterally oscillating probe. Using this SCM, a set of images of topography, dC/dV, and dC/dX is simultaneously obtained. The SCM developed shows sensitivity for dC/dV higher than the conventional SCM. The dC/dX image clearly indicates the built-in depletion region due to the p-n junction.
Appl.Phys. Lett. 78, 2955 (2001).

SNAM
Scanning Near field Acoustic Microscopy
Probe Microscopy 1, 187 (1998).
SNDM

Scanning Nonlinear Dielectric Microscopy
Figure 1.(a) shows a schematic configuration of the SNDM probe developed for the simultaneous observation of surface morphology and domain patterns of ferroelectric materials. A conductive cantilever is used along with the SNDM probe and AFM probe in order to carry out simultaneous measurement. The SNDM probe consists of the tip, an inductance element L, a capacitance element C0, a feedback amplifier and a ring ground electrode which compose the LC oscillator. Cs is the capacitance between the tip and the ring-shaped ground electrode, as shown in Figure 1 (b). The probe oscillates at a resonant frequency $f_0 = 1/(2\pi\sqrt{L(C_s+C_0)})$ , where C0 represents a stray capacitor in the electrical circuit. During the measurement, an additional AC voltage Vp of much lower frequency fa than f0 is applied between the sample stage and the ring electrode. Since the L is sufficiently small to conduct the AC voltage to the tip, the additional voltage is applied between the sample stage and the top of the tip. The applied voltage Vp modulates the Cs due to the nonlinear dielectric response whose sign changes in accordance with the polarization of the specimen under the tip. Therefore one can measure the polarization of the specimen by measuring the dynamic frequency deviation.
Figure 2. is a schematic diagram of the system for simultaneous observation of surface morphology and domain patterns.
Jap. J. Appl. Phys. 39, 3808 (2000).

SNOM
Scanning Near field Optical Microscopy
Appl. Phys. Lett. 44, 651 (1984).
SNP
SNP stylus nanoprofilometer
SPC
Statistical process control
SPE
Scanning Probe Electrochemistry
SPM
Scanning Probe Microscope
Scanning Proximity Microscope
Scanning Probe Microscope where the probe is brought to nearest proximity to sample surface
SP NFOM
Scanning Plasmon NFOM
Phys. Rev. Lett. 68, 476 (1992).
SP STM
Spin-Polarized STM
Phys. Rev. Lett. 86, 4132 (2001).
SRAM
SRAM - Static Random Access Memory
SRET
Scanning Reference Electrode Technique
http://www.uniscan.co.uk/
SRM
Spreading Resistance Microscopy
http://home.ee.umanitoba.ca/~spm/srm/srm.html
SRP
Spreading Resistance Profiling
http://home.ee.umanitoba.ca/~spm/srm/srm.html
SSFM
Submarine SFM
The SSFM is constructed as a standalone, remote-controlled, and water-tight microscope that can be put upside down into the water subphase of a commercial LB trough. The SFM tip therefore approaches the air/water interface from underwater allowing the investigation of the LB chromophores.
J. Vac. Sci. Technol. B 14, 1387 (1996).
Scanning Shear-Force Microscopy
SSHM
Scanning Surface Harmonic Microscopy
Rev. Sci. Instr. 63, 4080 (1992).
SSPM

Scanning Surface Potential Microscopy
In SSPM the cantilever is not driven mechanically; rather, the tip is biased directly by Vtip = Vdc +Vaccos( wt), where Vac is referred to as the driving voltage. The capacitive force Fcap(z) between the tip and a surface at potential V s is
F cap( z) = (1/2)(Vtip -Vs2 ) (dC(z)/dz)
where C(z) is the tip-surface capacitance dependent on tip geometry, surface topography and tip-surface separation z. The first harmonic of the force is
Fcap1w(z) = (dC(z)/dz)(Vdc - Vs) Vac
and feedback is used to nullify this term by adjusting the constant component of the tip bias Vdc . This condition is met when Vdc is equal to surface potential and thus, mapping the nulling potential Vdc yields a surface potential map.
Phys. Rev. B 63, 125411 (2000).

SSRM
Scanning Spreading Resistance Microscopy
STEM
Scanning Transmission Electron Microscopy
SThM

Scanning Thermal Microscope
SThM is based upon a noncontacting near-field thermal probe. Profiling is achieved by scanning the heated sensor above but close to the surface of a solid. The conduction of heat between tip and sample via the air provides a means for maintaining the sample spacing constant during the lateral scan.
Appl. Phys. Lett. 49, 1587 (1986).

STI
shallow-trench isolation
STM
Scanning Tunneling Microscope
STM-IETS
STM Inelastic Electron Tunneling Spectrosccopy
Phys. Rev. Lett.  86, 2593 (2001).
STS
Scanning Tunneling Spectroscopy
S-UFM
Sample Ultrasonic Force Microscopy
Ultrasonic Force Microscopy with ultrasonic vibrated sample.
Nanotechnology 12, 53 (2001).
SVET
Scanning Vibrating Electrode Technique
http://www.uniscan.co.uk/svp100frame.html
swipping
Moving and remuving of small particles by the SPM probe during imaging them.
Appl. Phys. Lett. 66, 3295 (1995).
SWR
side wall roughness
SXM
Scanning Proximity Microscopy
 
 
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